193020
博碩士論文
Huang,Kai Ping, 黃凱平
碩士 / 國立清華大學 / 電子工程研究所 / 104 / Recently , due to the rapidly developing of commercial electronics, the demands of fast and mass storage devices increase. The mainstream NVM that dominate the market nowadays, Flash, have suffered from a spectrum of challenges--current leakage, ultra-high apply voltage, and, most important, scale possibility. These barrier, paradoxically, serve as catalyst for full-bloom investigation on new memory technology, especially resistive random access memory, RRAM.As the ...