192903
博碩士論文
Kuo, Yen-Chen, 郭彥成
碩士 / 國立臺灣師範大學 / 機電工程學系 / 106 / Traditional nonvolatile memory, such as SONOS Flash has disadvantages of high operating voltage, random dopant fluctuation, tunneling oxide induced leakage, random telegraph noise, and the other scaling limitation. These shortcomings make integration difficult, so, numerous efforts have been made on looking for future generation emerging memory.
On the other hand, Resistive Random Access Memory ( RRAM ) has an advantage of low power consumption, easy integration i...