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192801
博碩士論文
Sith-Ming Chen, 陳世明
碩士 / 國立成功大學 / 機械工程學系碩博士班 / 91 / Fluid flow and heat transfer over louver finned-tube heat exchangers under the dry condition were studied numerically and experimentally in the first year. The effects of different geometrical factor, including louver angle (15°,20°,25°), fin pitch (6, 8, 12 fins/inch), and louver pitch (1mm, 0.75mm) are investigated in detail for different Reynolds numbers. Numerical results indicate that both average Nusselt number and pressure drop coefficient are increased as...
來源: NDLTD
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System ID: 413450
192802
博碩士論文
Ying-Hao Wu, 吳英豪
碩士 / 國立成功大學 / 機械工程學系碩博士班 / 91 / Experimental and numerical analyses were carried out to study the heat transfer and flow in the plate finned-tube heat exchangers with inclined block shape vortex generators mounted behind the tubes. The study was performed for a variety of span angle over a range of flow conditions. Experiments were examined by a water tunnel system to visualize local flow structure. In addition, numerical simulation was performed by a 3-D turbulence analysis of the heat transfer...
來源: NDLTD
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System ID: 413449
192803
博碩士論文
Jen-Shih Huang, 黃仁仕
碩士 / 國立成功大學 / 機械工程學系碩博士班 / 92 / The present study applies the laplace transform method and the finite-difference method in conjunction with the least-squares scheme and temperature measurements to estimate the heat transfer coefficient on the tube of finned-tube heat exchangers.   In the hybrid inverse scheme of the present thesis, the laplace transform method is first applied to deal with the time domain and then the resulting differential equations are solved by using the finite-difference ...
來源: NDLTD
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System ID: 413448
192804
博碩士論文
Hong-wun Li, 李宏文
碩士 / 國立成功大學 / 機械工程學系碩博士班 / 92 / The numerical analysis was carried out to study the 3- D heat transfer and flow in finned tube heat exchanger of Air-cooled condenser. Three kinds of major/mirror axis ratios (2.5、2.8 and 3) are examined for the elliptic finned-tube heat exchangers and the results are also compared with the corresponding circular finned-tube having the same perimeter. Numerical simulation was performed by 3-D turbulence analysis with conjugated heat transfer and fluid flow. The...
來源: NDLTD
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System ID: 413447
192805
博碩士論文
Wei-Jen Chen, 陳偉仁
碩士 / 國立成功大學 / 航空太空工程學系碩博士班 / 92 / The study of normal shock wave reflected on the wedges of 50° and 35°,respectively,with an overhanging vertical fin with incident shock Mach number of 1.30 to 1.69 has been done in the shock tube facility of Institute of Aeronautics and Astronautics in National Cheng-Kung University. The reflection-to-diffraction process of incident normal shock on the vertical fin generates a vortex over the tip of the vertical fin. The reflection-to-diffraction process by the ...
來源: NDLTD
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System ID: 413446
192806
博碩士論文
Ren-ya Yang, 楊荏雅
碩士 / 國立中山大學 / 光電工程學系研究所 / 103 / Metal-oxide-semiconductor field effect transistors (MOSFETs) play an important role in integrated circuit. The dimension of MOSFETs has been shrinking continuously and follows Moore''s Law. But as MOSFETs is shrunk down into the deep submicrometer dimensions, the gate controllability of the channel potential decreases, resulting in enhanced short channel effect, and also lead to leakage current and realibility issues. Therefore, this thesis will investig...
來源: NDLTD
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System ID: 413445
192807
博碩士論文
Wen-Jong Luo, 駱文忠
碩士 / 逢甲大學 / 機械工程學系 / 89 / The main objective of this study was to research the thermal contact resistance of a circular finned-tube heat exchanger by sequential regularization method of the inverse heat conduction methods. The inverse heat conduction method is to measure experimentally the transient temperature at certain locations inside the circular fin so as to estimate the unknown thermal contact resistance.To improve the computation efficiency, enhance the accuracy, and reduce the unsteadin...
來源: NDLTD
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System ID: 413444
192808
博碩士論文
Jiin-Wen Hwang, 黃錦文
博士 / 中原大學 / 機械工程學系 / 89 / There are many effect factors not only the tube row, fin type, and fin pitch, but also the inlet conditions and geometrical structure of FHE on the HTP. A study of the inlet conditions, the space between blower and fins, twin blowers, side wall, the air distribution that is blow-through or draw-through towards the HTP of FHE is proposed. After test and analysis the suitable face velocity of coil is between 2.3~2.8m/s. The high face velocity will cause carry over phenome...
來源: NDLTD
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System ID: 413443
192809
博碩士論文
Zheng, Yong Sheng, 鄭永昇
碩士 / 國立海洋大學 / 水產養殖研究所 / 84 /
來源: NDLTD
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System ID: 413442
192810
博碩士論文
HUAN CHUAN TSENG, 曾煥全
碩士 / 國立成功大學 / 機械工程學系 / 87 / Experiments are conducted to measure and analyze the thermal-hydraulic characteristics of plate finned-tube evaporators under frosting conditions for different fin pitches (3,6 fins per inch) , different outside tube diameters (1/2,5/16 inch),and different operating conditions( i.e., different air velocity, ambient temperature, ambient relative humidity ratio and tube wall temperature). The variations of the heat transfer rate , overall heat transfer coefficient , pre...
來源: NDLTD
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System ID: 413441
192811
博碩士論文
Chang- Hsin Chien, 簡彰信
碩士 / 國立清華大學 / 動力機械工程學系 / 87 / For the improvement of industry of motor in Taiwan, it is more essential to study this problem of motor engine. Accordingly, one adopts the cooling fins to analysis method is used to measure the temperature of fin''s besides, calculate the local heat transfer distribution, and average heat transfer rate. One expect the view point of heat transfer to investigate the combustion process, then improve the geometric scale of fin to make the uniform temperature of fin. In...
來源: NDLTD
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System ID: 413440
192812
博碩士論文
You-Liang Ju, 朱祐良
碩士 / 明新科技大學 / 電子工程系碩士班 / 103 / It shall be the must to shrink the sizes of electronics devices in the Integrated Circuit Industry, which uses silicon or semiconductor as substrate. As the sizes get shrunk, the manufacture cost will be tremendously lowered and thus be competitive. Nevertheless, the quantum effects become apparent such that the devices confront issues, such as large Ioff. This leakage current is too large to satisfy the requirement of controllability. Conventional MOSFET is mandat...
來源: NDLTD
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System ID: 413439
192813
博碩士論文
Jian- Liang Lin, 林建良
碩士 / 明新科技大學 / 電子工程系碩士班 / 103 / For the traditional CMOS transistors with planar form, these devices have been applied for a long time in semiconductor industry. Due to the need of the IC marketing, the shrinkage of device feature is a major trend, but the process development also faces lots of issues and challenge. Furthermore, the decrease of the power supply is the other urgent need to reduce the power consumption in IC operation. In the meantime, the physical limitation in lithography is grad...
來源: NDLTD
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System ID: 413438
192814
博碩士論文
Tsai Wen Chin, 蔡文欽
碩士 / 國立交通大學 / 機械工程研究所 / 82 /
來源: NDLTD
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System ID: 413437
192815
博碩士論文
WANG,CHIEN-LI, 王建力
碩士 / 明新科技大學 / 電子工程系碩士班 / 103 / Semiconductor uses the mechanism that the channel is strongly reversed to conduct Source and Drain. As the length of the channel is shorten, the rest part of the substrate, except the to-be-strongly-inversed part close to the gate oxide, becomes so leaky that the conventional device is no longer controllable. Instead, the 3-D channel of FinFET looking like a fin can be simultaneously strongly-inversed and used as a barrier that would protect the device from being l...
來源: NDLTD
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System ID: 413436
192816
博碩士論文
Shao-an Chen, 陳劭安
碩士 / 國立高雄大學 / 電機工程學系--先進電子構裝技術產業研發碩士專班 / 103 / In order to achieve favorable performances and reliability of device, the 3D-structure FinFET has been considered as one of the most promising options for future devices to replace planar MOSFETs. In this work, it is found that the thinner gate electrode device shows better performance than the thicker one. After NBTI stress, thicker gate electrode device shows the more serious electric degeneration. The phenomenon could be explained by R-D model. T...
來源: NDLTD
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System ID: 413435
192817
博碩士論文
Huang, Wen-Tsung, 黃文聰
碩士 / 國立交通大學 / 電信工程研究所 / 103 / The technology of semiconductor device has developed fast for decades. In pursue to high performance and high packing density, the new process technology, the new devices' structures, and even the new materials play the significant roles on the complementary metal-oxide-semiconductor (CMOS) technology scaling. Nowadays, the technology node has been 16 nm. The planar MOSFET cannot provide good performance and is replaced by the multi-gate field effect transistors. Am...
來源: NDLTD
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System ID: 413434
192818
博碩士論文
Chen,Yi-Jin, 陳怡縉
碩士 / 國立高雄應用科技大學 / 模具工程系 / 103 / Reducing the heat problem for electronic or lighting equipment is becoming a key issue, because the electronic or lighting equipment damage usually results from thermal energy existing in the instrument. The cooling medium, heat sink, is frequently utilized in the electronic products for dissipating the thermal energy at the heat source. Generally, the heat sink is designed to yield the increase in the surface area to enhance the thermal conduction appearing in th...
來源: NDLTD
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System ID: 413433
192819
博碩士論文
Ling-JuTeseng, 曾鈴如
碩士 / 國立成功大學 / 機械工程學系碩博士班 / 101 / The present study applies the numerical inverse methods and fluid dynamics simulation software with the measured temperature data to research the heat transfer characteristic of cooling fins which placed in different height and apparent enclosures. Because of non-uniform heat transfer coefficient distribution on the fin. First, whole of plate fin was divided into several regions, and the heat transfer coefficient on each region is assumed to be unknown constant. ...
來源: NDLTD
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System ID: 413432
192820
博碩士論文
Ko-Fan,Liao, 廖珂汎
碩士 / 明新科技大學 / 電子工程研究所 / 102 / CMOSFET devices of 18 nanometers have been manufactured by using FinFET structure to achieve higher speeds of transferring signals and, in the mean time, to lower the consuming power. FinFET has gained the reputation because of its less leaky fin-like channel and higher controllability with elimination of body such that the whole channel is thus depleted as the gate is biased. One is intrigued in how the measured ID-VD curves fit the conventional parameterized ID-VD...
來源: NDLTD
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System ID: 413431
192821
博碩士論文
Wan-Lin Tsai, 蔡宛霖
碩士 / 國立屏東科技大學 / 水產養殖系所 / 96 / The Sparidae fishes are the main economical resource of conventional fishing and the in extensive farming distributed around the world. Picnic sea bream (Acanthopagrus berda) inhabits estuaries and coastal waters throughout the Indian Ocean, West Pacific Ocean, and Red Sea. It is an important species of recreational fisheries in estuarine and coastal waters of Taiwan. Due to the drastically decrease in wild populations, there is an urgent need to determine strategie...
來源: NDLTD
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System ID: 413430
192822
博碩士論文
Tsung-Hung Lu, 呂宗鴻
碩士 / 國立臺南大學 / 綠色能源學科技學系碩士在職專班 / 103 / We called the LED(Light Emitting Diode) for green light because it equiped energy saving, environmental protection, long life, small size and so on. LED luminous efficiency and lifetime of work display the inverse relationship with temperature, when the temperature exceeds 120 ℃, will accelerate the deterioration of the lamp body and packaging materials. This paper would analyzed the interface-temperature of the substrate with the Heat-Sink. Generally,becaus...
來源: NDLTD
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System ID: 413429
192823
博碩士論文
Chin-Tang Tseng, 曾敬棠
碩士 / 逢甲大學 / 機械工程學所 / 90 / Fluid flow and heat transfer in a plate-fin-and-tube heat exchanger were studied numerically. Flow is incompressible, three-dimensional and laminar. A commercial PHOENICS code which is based on the SIMPLE algorithm are used to solve a set of nonlinear partial differential equations. The effects of different geometrical parameters such as the shape, the angle of attack, the number, the position of vortex generators and the velocity of the main flow are investigated. The ...
來源: NDLTD
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System ID: 413428
192824
博碩士論文
KE, JIA-SHENG, 柯佳昇
碩士 / 國立暨南國際大學 / 電機工程學系 / 105 / The research can divided by two parts, the first part is the experiment of sputtering, and the second one is about the nanoimprint lithography. As the result of first sputter deposition, the IGZO shows better performance in oxygen flow 5%, higher mobility and lower sub-threshold swing. Therefore, the measurement result of TLM (Transfer Length Method) indicated that IGZO had lower sheet resistance in oxygen flow 5%. Furthermore, when the thin film (IGZO) was resputt...
來源: NDLTD
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System ID: 413427
192825
博碩士論文
Cheng-chung Chang, 張正忠
碩士 / 逢甲大學 / 機械工程學所 / 91 / ABSTRACT The three-dimensional fluid flow in a plate finned oval tube heat exchanger with vortex generator was studied with the SIMPLE algorithm method in addition to an understanding of heat transfer properties and pressure drop. The result of local heat transfer coefficient was analyzed directly and compared with the convection heat transfer coefficient obtained by the conjugate gradient method. This approach was to check the accuracy of the convection heat transfer...
來源: NDLTD
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System ID: 413426
192826
博碩士論文
LIN, SHIH-WEI, 林士瑋
碩士 / 國立高雄大學 / 電機工程學系碩士班 / 104 / This thesis studies the effects of mechanical stresses on [110] and [100] orientated channel and degradation of positive bias temperature instability (PBTI) on nFinFETs. The results show that [100] orientated devices have smaller drain current and transconductance compared to channel direction [100] devices, but have less degradation under PBTI test, even the same drain current and transconductance degradation with per effective width (Weff). The devices with [100...
來源: NDLTD
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System ID: 413425
192827
博碩士論文
Jhih-Syong Siao, 蕭志雄
碩士 / 國立聯合大學 / 機械工程學系碩士班 / 102 / Due to the rapid development of science and technology, high performance electronics get lighter, thinner, shorter and smaller. Heat generation per unit volume is thus dramatically increasing and hot spots will be occurred. Since hot spots will reduce the performance of electronics and even let electronics burned, how to dissipate heat becomes a critical issue. Currently, a combination of vapor chamber and heat sink is the most promising solution. Phase change of ...
來源: NDLTD
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System ID: 413424
192828
博碩士論文
Kao, Chia Hung, 高嘉宏
碩士 / 國立清華大學 / 工程與系統科學系 / 104 / For germanium (Ge) material, it provides two times electron mobility and four times hole mobility than silicon (Si). Therefore, Ge is used as channel material in SOI FinFET to obtain high channel mobility. The interface between Ge and high-k dielectric is also investigated to obtain ultra-thin equivalent oxide thickness (EOT) and reduced gate leakage current. Ultrahigh vacuum chemical molecular epitaxy (UHV-CME) and ASM (EPSILON 2000+), two facilities in National N...
來源: NDLTD
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System ID: 413423
192829
博碩士論文
Chao-HanWu, 吳釗瀚
碩士 / 國立成功大學 / 機械工程學系 / 104 / In this study, the fluid flow and heat transfer characteristics of turbulent forced convection of air flow through perforated circular pin fin heat sinks with constant heat flux are investigated numerically. The parameters studied are diameter of circular pin fins, diameter of perforations, space of perforations and Reynolds number. The effects of D, d, s and Re on friction factor and averaged Nusselt number are also discussed in detail. Subsequent numerical computat...
來源: NDLTD
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System ID: 413422
192830
博碩士論文
Chen, Hsien Hao, 陳賢昊
碩士 / 國立清華大學 / 電子工程研究所 / 104 / In recent years, the demand of consumer electronics increases, smart phone, tablet computer and liquid-crystal display (LCD) especially, and the results can be generally credited to improvement and progress of power devices. Major concerns of characteristics of high-voltage devices are breakdown voltage and on-resistance since they closely related to voltage endurance and low power consumption. However, the trade-off between breakdown voltage and on-resistance exist...
來源: NDLTD
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System ID: 413421
192831
博碩士論文
Chen, Yu Zheng, 陳裕禎
碩士 / 國立清華大學 / 電子工程研究所 / 104 / With the explosive growth of the demand for portable electronic products, internet of things, and cloud applications, the development of semiconductor memories has been the focus of much attention in these years. CMOS compatible embedded non-volatile memories have been widely introduced due to the high integration with integrated circuits. One-Time Programmable (OTP) memories with the benefits of low power and high reliability have been widely applied in parameter s...
來源: NDLTD
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System ID: 413420
192832
博碩士論文
Chen,Po Yen, 陳柏硯
碩士 / 國立清華大學 / 工程與系統科學系 / 104 / A lattice mismatch exists between silicon and germanium material ,which induces a strain in Si/Ge channel FinFET. If a Ge epitaxy layer is under its critical thickness, a strain would be generated to promote carrier mobility. Epitaxy Si/Ge super-lattice is applied for SOI FinFET device in this thesis. Effects of Ge ratios in Si/Ge channel and are studied with different Si/Ge layer thicknesses as during epitaxy process.Higher carrier mobility in FinFET may be achiev...
來源: NDLTD
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System ID: 413419
192833
博碩士論文
Chen, Chin Yu, 陳慶育
碩士 / 國立清華大學 / 工程與系統科學系 / 104 / 因申請專利緣故,資料延後公開
來源: NDLTD
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System ID: 413418
192834
博碩士論文
Feng, Hao Ting, 馮浩庭
碩士 / 國立清華大學 / 工程與系統科學系 / 104 / Transistors’ feature sizes continuingly scale down due to the lasting advancement of CMOS process; nevertheless, conventional MOSFET transistors confront some issues when transistors’ feature sizes scale down lower than 45 nm, such as the effect of subthreshold leakage, gate leakage, process variation, and so on. Therefore, the author hopes to conquer foregoing factors by SOI substrate and FinFET structure. FinFET doesn’t own the said problems MOSFET transistors ha...
來源: NDLTD
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System ID: 413417
192835
博碩士論文
Guan-JieWang, 王冠傑
碩士 / 國立成功大學 / 系統及船舶機電工程學系 / 104 / SUMMARY A fin shape design problem is considered in this thesis utilizing the Levenberg-Marquardt Method (LMM) and a commercial package CFD-ACE+. The objective is to design the optimal fin shape of the radial heat sink for light-emitting diode (LED) lighting devices and to enhance the cooling performance of the heat sink. The working condition of the heat sink is assumed natural convection condition and the effect of radiation heat transfer between heat sink an...
來源: NDLTD
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System ID: 413416
192836
博碩士論文
WANG,YU-WEI, 王昱崴
碩士 / 明新科技大學 / 電子工程系碩士班 / 104 / Planar field effect transistors in semiconductor industry have been used for a long time, playing a main role in the past. Since the process technology is promoted, the shrinkage of device profile is well done. However, this technology gradually approaches the physical limitation. Most of researchers or scientists seek the other available alternatives. A fin field effect transistor (FinFET) device seems a good choice in this process era. In this study, the FinFE...
來源: NDLTD
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System ID: 413415
192837
博碩士論文
Jhe-Ruei Hu, 胡哲睿
碩士 / 國立中興大學 / 機械工程學系所 / 101 / This study, based on numerical analysis by Fluent, investigates the downstream flow characteristics, propulsive efficiency, the contributions from the pressure difference and the net momentum efflux through control volume analysis while the flexible fin undergoes the coupled oscillating-heaving motion. The inflow velocity is 5cm/s and the corresponding Reynolds number is 5000. By changing the Strouhal number (St) and the phase angle (φ) between two motions, the thru...
來源: NDLTD
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System ID: 413414
192838
博碩士論文
SU, CHE-WEI, 蘇哲緯
碩士 / 國立臺灣海洋大學 / 機械與機電工程學系 / 104 / The objective of this study is to optimize the design work of finned-tube air heaters. Water, steam and Dowtherm oil are chosen to be the hot working fluids. First, a single fin tube is investigated experimentally, and the measured temperatures and fin efficiency are verified by theoretical curves and Ansys software. During the thermal analysis, the LMTD method is applied. The pressure drop as well as heat transfer coefficients have been calculated in both the ...
來源: NDLTD
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System ID: 413413
192839
博碩士論文
Yu-JieChiu, 邱毓絜
碩士 / 國立成功大學 / 機械工程學系 / 104 / The present study applies the inverse method and computational fluid dynamics commercial software in conjunction with the experimental method to predict the heat transfer and fluid flow characteristics of annular finned tube heat exchangers. The effects of some physical parameters such as fin spacing, air velocity and tube diameter are examined. Due to the heat transfer coefficient on the fin is non-uniform, the fin is divided into several sub-regions. Later, the inv...
來源: NDLTD
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System ID: 413412
192840
博碩士論文
Yen-HsiungChen, 陳彥雄
碩士 / 國立成功大學 / 機械工程學系 / 104 / This study applies inverse method and FLUENT to determine the heat transfer and fluid flow characteristics of plate-fin heat sinks with a pair of vortex generators in a cross flow channel. Using measured data to forecast and analyze the average heat transfer coefficient on the fin in limited space. The inverse method along with the finite difference method and experimental temperature data is applied to determine the heat transfer coefficient. Since the distribution ...
來源: NDLTD
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System ID: 413411
192841
博碩士論文
Yung-ShiangLin, 林詠翔
碩士 / 國立成功大學 / 機械工程學系 / 104 / The present study applies the inverse method and CFD software in conjunction with the experimental method to predict the heat characteristics of plate-fin and tube heat exchangers. The effects of parameters such as fin pitch, air velocity and tube diameter are examined. Since the heat transfer coefficient on the fin is not uniform, the fin is divided into several sub-regions and the heat transfer coefficient in each sub-regions is assumed to be a constant. Later, the...
來源: NDLTD
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System ID: 413410
192842
博碩士論文
Chung-YiWu, 吳重億
碩士 / 國立成功大學 / 機械工程學系 / 104 / This study applies inverse method and FLUENT to determine the heat transfer and fluid flow characteristics of plate-fin heat sinks with various enclosures and whether to install the axial-flow fan inside and exhaust fan on the cabinet. Using measured data to predict and analyze the average heat transfer coefficient on the fin in limited space. The inverse method along with the finite difference method, least squares fitting method and experimental temperature data ar...
來源: NDLTD
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System ID: 413409
192843
博碩士論文
Nai-Rong Hsu, 許乃蓉
碩士 / 國立中央大學 / 電機工程學系 / 105 / Following the rapid development of integrated circuit technology, the quest for integrating high-mobility channel metal-oxide-semiconductor field-effect transistors (MOSFETs) has become even more urgent because current aggressively scaled devices are approaching their physical limit. As indicated by the recent status of material technology, Ge, which has higher hole mobility than Si, is likely to be the choice for p-channel MOSFETs, while high electron mobility III-V...
來源: NDLTD
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System ID: 413408
192844
博碩士論文
Yi-Lu Dai, 戴易錄
碩士 / 國立中興大學 / 電機工程學系所 / 105 / In order to overcome the physical limitation of the device scaling, the ferroelectric (FE) with a negative capacitance effect can be applied to solve this kind of problem, so that Subthreshold Swing (SS) can be lower to 60 mV / dec and the effect of device quick opening can be realized in the low voltage condition. In this thesis, the device characteristics of negative capacitance transistors were studied by TCAD simulation. The adoptive ferroelectric with a negativ...
來源: NDLTD
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System ID: 413407
192845
博碩士論文
Yi-Xiong Lin, 林義雄
碩士 / 國立成功大學 / 機械工程學系碩博士班 / 93 / ABSTRACT  The paper was divided into two parts . First ,an induced open wind tunnel was used to measure the thermal-hydraulic characteristics with and without spray effect .The dimensions of heat exchangers for elliptic finned tube are 2.5,2.83 and 3.1 for the aspect ratio. The ambient temperature and humidity were controlled at about 27oC and 70% , respectively. The range of the frontal velocity for measurement was controlled between 1 m/s to 5 m/s, while the wa...
來源: NDLTD
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System ID: 413406
192846
博碩士論文
Chien-Jung Chen, 陳建榕
碩士 / 元智大學 / 機械工程學系 / 90 /
來源: NDLTD
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System ID: 413405
192847
博碩士論文
LIN,RUEI-FONG, 林瑞鋒
碩士 / 國立高雄應用科技大學 / 機械工程系 / 105 / The thesis of optimization theory and field synergy principle is applied to to explore the relationship between the performance of heat transfer and field synergy angle with the heat fins under forced convection (fan cooling). First, the thermal transfer enhancement of fins at different fin height, fin angle and fin circumference of three design parameters utilizing multi-objective response surface methodology to identify the most suitable simulation equations. Th...
來源: NDLTD
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System ID: 413404
192848
博碩士論文
Tsai, Yi Pei, 蔡宜霈
碩士 / 國立清華大學 / 電子工程研究所 / 104 / 因申請專利緣故,資料延後公開
來源: NDLTD
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System ID: 413403
192849
博碩士論文
Liu, Shau-Nung, 劉劭農
碩士 / 國立臺灣師範大學 / 光電科技研究所 / 104 / This is experimental demonstration integrating Ge FETs with ferroelectric HfZrOx gate stack for subthreshold swing (SS) < 60mV/dec and hysteresis-free by negative capacitance (NC) effect. The capacitance of semiconductor and ferroelectricity is matched to obtain the no VT shift for forward and reverse sweeps with hysteresis-free. The body factor and modeling are performed to validate the NC effect and optimize the Ge thickness by numerical calculation, respectivel...
來源: NDLTD
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System ID: 413402
192850
博碩士論文
WANG,TZUO-LI, 王佐禮
碩士 / 國立高雄師範大學 / 電子工程學系 / 104 / In this work, hot carrier effect (HCE) was used to study the reliability of n-channel FinFET devices. We compared the effect of reliability with different fin numbers. Power law analysis was used to distinguish the bulk trap from Positive Bias Temperature Instability (PBTI) and the impact ionization from intrinsic Hot Carrier Effect (intrinsic HC). Finally, we analyzed the degradation of devices from parameters of electrical property. From the experimental results,...
來源: NDLTD
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System ID: 413401